advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 40v single drive requirement r ds(on) 25m surface mount package i d 7a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without notice thermal data parameter storage temperature range total power dissipation 2 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.016 continuous drain current 3 , v gs @ 10v 5.5 pulsed drain current 1 20 gate-source voltage 20 continuous drain current 3 , v gs @ 10v 7 parameter rating drain-source voltage 40 rohs-compliant product 1 AP9962AGM 200810282 advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. s1 g1 s2 g2 d1 d1 d2 d2 so-8 g2 d2 s2 g1 d1 s1 the so-8 package is widely preferred for commercial- industrial surface mount applications and suited for low voltage applications such as dc/dc converters.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 40 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =7a - - 25 m ? ? ,
ap9962ag m fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 14 18 22 26 30 246810 v gs , gate-to-source voltage (v) r ds(on) (m
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 AP9962AGM 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 10 100 1000 10000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c rss c oss 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =20v v ds =24v v ds =32v i d =7a 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a rthja = 135
millimeters symbols min nom max a 1.35 1.55 1.75 a1 0.10 0.18 0.25 b 0.33 0.41 0.51 c 0.19 0.22 0.25 d 4.80 4.90 5.00 e 5.80 6.15 6.50 e1 3.80 3.90 4.00 e g l 0.38 0.90 0.00 4.00 8.00 1.all dimension are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : so-8 1.27 typ 0.254 typ package outline : so-8 advanced power electronics corp. e b 1 34 5 6 7 8 2 d e1 a1 a g part number 9962a g m ywwsss package code date code (ywwsss) y last digit of the year ww week sss sequence e meet rohs requirement for low voltage mosfet only
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